Emerging memory technologies encompass non-volatile and alternative memory architectures designed to overcome limitations of SRAM, DRAM, and flash. Resistive random-access memory (RRAM), phase-change memory (PCM), conductive bridging RAM (CBRAM), ferroelectric RAM (FeRAM), magnetoresistive RAM (MRAM), and racetrack memory are among the leading candidates. These technologies offer combinations of non-volatility, high endurance, low latency, and scalability that could enable new architectures: storage-class memory, in-memory computing, and neuromorphic arrays. Phase-change and RRAM have reached limited commercialization; others remain in development.
Conventional memory faces scaling and power limits: DRAM leakage, flash endurance, and the von Neumann bottleneck. Emerging memories could enable denser, faster, non-volatile storage and in-memory computation. Challenges include variability, endurance, and integration with existing CMOS. Research continues into materials engineering, device reliability, and system architectures that exploit new memory properties. As demand for AI and edge computing grows, emerging memories represent a critical frontier for next-generation computing.